Sunday, June 7

08:30-10:00Short Course 1
"Fundamentals of crystal growth and epitaxy"
10:15-11:45Short Course 2
"In-situ optical techniques for MOVPE"
12:00-13:30Short Course 3
"Production process design for electronic devices with focus on epitaxy: GaN-based Heterostructure Field Effect Transistors"
19:30-21:30Welcome reception

Monday, June 8

09:00 - 09:30Welcome
09:30 - 10:15T. Fukui: " III-V semiconductor nanowires and core-shell nanowires and their device applications."
10:15 - 11:00W. Lundin: " Optimization of III-N heterostructure growth by MOVPE via control of surface processes"
11:00 - 11:15
Coffee break
11:15 - 13:15Poster session A
Lunch
14:30 - 15:15J.R. Creighton: " The impact of gas-phase and surface chemistry during group-III nitride MOVPE."
15:15 - 16:00J. Decobert: " Selective Area Growth for Photonic Integrated Circuits."
16:00 - 16:30Coffee break
16:30 - 18:30Poster session B

Tuesday, June 9

09:00 - 09:45T. Bergunde: " Production, development and perspectives of Azur's multijunction solar cells."
09:45 - 10:30J. Hails: " p-type doping of narrow gap II-VI materials by MOVPE."
10:30 - 11:00Coffee break
11:00 - 13:00Poster session C
Lunch
14:00Start to excursion
- City tour Ulm
- Mercedes Benz Museum, Stuttgart
20:00Workshop dinner

Wednesday, June 10

09:00 - 09:45C. Wang: " Strain-Compensated GaInAs/AlInAs/InP Quantum Cascade Lasers."
09:45 - 10:30M. Leszcynski: "MOVPE and MBE in nitride laser-diode technology."

10:30 - 11:00Coffee break
11:00 - 13:00Poster session D
Lunch

Organization

Contact

  • EWMOVPE 2009
  • Institute of Optoelectronics
  • Albert-Einstein-Allee 45
  • 89081 Ulm
  • Tel:  +49 (0)731 50 26052
  • Fax: +49 (0)731 50 26049