08:30-10:00	Short Course 1 "Fundamentals of crystal growth and epitaxy"
10:15-11:45	Short Course 2 "In-situ optical techniques for MOVPE"
12:00-13:30	Short Course 3 "Production process design for electronic devices with focus on epitaxy: GaN-based Heterostructure Field Effect Transistors"
19:30-21:30	Welcome reception

09:00 - 09:30	Welcome
09:30 - 10:15	T. Fukui: " III-V semiconductor nanowires and core-shell nanowires and their device applications."
10:15 - 11:00	W. Lundin: " Optimization of III-N heterostructure growth by MOVPE via control of surface processes"
11:00 - 11:15	Coffee break
11:15 - 13:15	Poster session A
	Lunch
14:30 - 15:15	J.R. Creighton: " The impact of gas-phase and surface chemistry during group-III nitride MOVPE."
15:15 - 16:00	J. Decobert: " Selective Area Growth for Photonic Integrated Circuits."
16:00 - 16:30	Coffee break
16:30 - 18:30	Poster session B

09:00 - 09:45	T. Bergunde: " Production, development and perspectives of Azur's multijunction solar cells."
09:45 - 10:30	J. Hails: " p-type doping of narrow gap II-VI materials by MOVPE."
10:30 - 11:00	Coffee break
11:00 - 13:00	Poster session C
	Lunch
14:00	Start to excursion - City tour Ulm - Mercedes Benz Museum, Stuttgart
20:00	Workshop dinner

09:00 - 09:45	C. Wang: " Strain-Compensated GaInAs/AlInAs/InP Quantum Cascade Lasers."
09:45 - 10:30	M. Leszcynski: "MOVPE and MBE in nitride laser-diode technology."
10:30 - 11:00	Coffee break
11:00 - 13:00	Poster session D
	Lunch