Publications
2017
228.
M. H. Eissa,
A. Malignaggi,
M. Ko,
K. Schmalz,
J. Borngräber,
A. C. Ulusoy and
D. Kissinger,
"216 - 256 GHz Fully Differential Frequency Multiplier-by-8 Chain with 0 dBm Output Power"
in Proc. Eur. Microw. Conf.,
Nuremberg, Germany,
Oct.
2017,
pp. 216-219.
227.
W. A. Ahmad,
J. -. Lu,
H. Raqibul,
D. Kissinger and
H. J. Ng,
"Design and Characterization of Series and Corporate Feed Differential Arrays for Broadband 60 GHz Radar Applications"
in Proc. Eur. Microw. Conf.,
Nuremberg, Germany,
Oct.
2017,
pp. 244-247.
226.
M. Kucharski,
J. Borngräber,
D. Kissinger and
H. J. Ng,
"A 109-137 GHz Power Amplifier in SiGe BiCMOS with 16.5 dBm Output Power and 12.8% PAE"
in Proc. Eur. Microw. Integr. Circuits Conf.,
Nuremberg, Germany,
Oct.
2017,
pp. 281-284.
225.
M. Dietz,
T. Girg,
A. Bauch,
K. Aufinger,
A. Hagelauer,
D. Kissinger and
R. Weigel,
"Broadband Multi-Octave Receiver from 1-32 GHz for Monolithic Integrated Vector Network Analyzers (VNA) in SiGe-Technology"
in Proc. Eur. Microw. Integr. Circuits Conf.,
Nuremberg, Germany,
Oct.
2017,
pp. 49-52.
224.
N. Rothbart,
K. Schmalz,
J. Borngräber,
S. B. Yilmaz,
D. Kissinger and
H. -. Hübers,
"Towards Breath Gas Detection with a 245 GHz Gas Sensor based on SiGe BiCMOS Technology"
in Proc. IEEE Sensors,
Glasgow, United Kindom,
Oct.
2017,
pp. 1305-1307.
223.
F. Herzel,
M. Kucharski,
A. Ergintav,
J. Borngräber,
H. J. Ng,
J. Domke and
D. Kissinger,
"An Integrated Frequency Synthesizer in 130 nm SiGe BiCMOS Technology for 28/38 GHz 5G Wireless Networks"
in Proc. Eur. Microw. Integr. Circuits Conf.,
Nuremberg, Germany,
Oct.
2017,
pp. 236-239.
222.
J. Wecker,
S. Kurth,
M. Meinig,
T. Otto,
A. Bauch,
R. Weigel,
D. Kissinger,
A. Hackner and
U. Prechtel,
"Millimeterwellen-Sensorsystem zur Messung der Sauerstoffkonzentration in Gasen"
in Proc. MikroSystemTechnik Kongress,
Munich, Germany,
Oct.
2017,
pp. 1-4.
221.
F. Herzel,
H. J. Ng and
D. Kissinger,
"Modeling of Range Accuracy for a Radar System Driven by a Noisy Phase-Locked Loop"
in Proc. Eur. Radar Conf.,
Nuremberg, Germany,
Oct.
2017,
pp. 521-524.
220.
I. Garcia Lopez,
P. Rito,
A. Awny,
M. Ko,
A. C. Ulusoy and
D. Kissinger,
"A 60 GHz Bandwidth Differential Linear TIA in 0.13 µm SiGe:C BiCMOS with < 5.5pA/sqrt(Hz)"
in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting,
Miami, FL,
Oct.
2017,
pp. 114-117.
219.
P. Ostrovskyy,
K. Tittelbach-Helmrich,
F. Herzel,
O. Schrape,
G. Fischer,
D. Kissinger,
P. Börner,
A. Loose,
D. Hellmann and
P. Hartogh,
"A Single Chip 16 GS/s Arbitrary Waveform Generator in 0.13 µm BiCMOS Technology"
in Proc. Nordic Circuits Syst. Conf.,
Link,
Oct.
2017,
pp. 1-4.
218.
H. J. Ng,
W. A. Ahmad and
D. Kissinger,
"Scalable MIMO Radar Utilizing Delta-Sigma Modulation-Based Frequency-Division Multiplexing Technique"
in Proc. Eur. Radar Conf.,
Nuremberg, Germany,
Oct.
2017,
pp. 118-121.
217.
M. Kucharski,
A. Malignaggi,
D. Kissinger and
H. J. Ng,
"A Wideband 129-171 GHz Frequency Quadrupler Using a Stacked Bootstrapped Gilbert Cell in 0.13 µm SiGe BiCMOS"
in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting,
Miami, FL,
Oct.
2017,
pp. 158-161.
216.
A. Bauch,
M. Dietz,
R. Weigel,
A. Hagelauer and
D. Kissinger,
"A Broadband 10-95 GHz Variable Gain Amplifier in SiGe"
in Proc. Eur. Microw. Integr. Circuits Conf.,
Nuremberg, Germany,
Oct.
2017,
pp. 155-158.
215.
E. Öztürk,
D. Genschow,
U. Yodprasit,
B. Yilmaz,
D. Kissinger,
W. Debski and
W. Winkler,
"A 60 GHz SiGe BiCMOS Double Receive Channel Transceiver for Radar Applications"
in Proc. Eur. Microw. Integr. Circuits Conf.,
Nuremberg, Germany,
Oct.
2017,
pp. 269-272.
214.
M. Voelkel,
M. Dietz,
R. Weigel,
A. Hagelauer and
D. Kissinger,
"A Low-Power 120-GHz Integrated Sixport Receiver Front-End with Digital Adjustable Gain in a 130-nm BiCMOS Technology"
in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting,
Miami, FL,
Oct.
2017,
pp. 82-85.
213.
K. Schmalz,
N. Rothbart,
J. Borngräber,
S. B. Yilmaz,
D. Kissinger and
H. -. Hübers,
"Gas Spectroscopy System with Transmitters and Receivers in SiGe BiCMOS for 225-273 GHz"
in Proc. SPIE Security Defence,
Warsaw, Poland,
Sep.
2017,
pp. 1-7.
212.
H. J. Ng,
M. Kucharski,
W. Ahmad and
D. Kissinger,
"Multi-Purpose Fully-Differential 61- and 122-GHz Radar Transceivers for Scalable MIMO Sensor Platforms",
IEEE J. Solid-State Circuits,
vol. 52,
no. 9,
pp. 2242-2255,
Sep.
2017.
211.
N. Rothbart,
K. Schmalz,
J. Borngräber,
D. Kissinger and
H. -. Hübers,
"Gas Detection with sub-ppm Sensitivity based on a 245 GHz SiGe BiCMOS Transmitter and Receiver"
in Proc. Int. Conf. Infrared Millimeter and Terahertz Waves,
Cancun, Mexico,
Aug.
2017,
pp. 1-2.
210.
M. H. Eissa,
A. Awny,
M. Ko,
K. Schmalz,
M. Elkhouly,
A. Malignaggi,
A. C. Ulusoy and
D. Kissinger,
"A 220-275 GHz Direct-Conversion Receiver in 130-nm SiGe:C BiCMOS Technology",
IEEE Microw. Wireless Compon. Lett.,
vol. 27,
no. 7,
pp. 675-677,
Jul.
2017.
209.
P. Rito,
I. Garcia Lopez,
A. Awny,
A. C. Ulusoy and
D. Kissinger,
"A DC-90 GHz 4-Vpp Differential Linear Driver in a 0.13 µm SiGe:C BiCMOS Technology for Optical Modulators"
in IEEE MTT-S Int. Microw. Symp. Dig.,
Honolulu, HI,
Jun.
2017,
pp. 1-4.
208.
A. Mai,
I. Garcia Lopez,
P. Rito,
A. Awny,
M. Elkhouly,
M. Eissa,
M. Ko,
A. Malignaggi,
M. Kucharski,
H. J. Ng,
K. Schmalz and
D. Kissinger,
"Scaling and Integration of High-Speed Electronics and Optomechanical Systems",
World Scientific,
Jun.
2017,
pp. 77-98.
207.
H. J. Ng,
M. Kucharski,
W. Ahmad and
D. Kissinger,
"Scalable Pseudo-Random Noise Radar"
in Proc. Int. Radar Symp.,
Prague, Czech Republic,
Jun.
2017,
pp. 1-9.
206.
A. Malignaggi,
M. Ko,
M. Elkhouly and
D. Kissinger,
"A Scalable 8-Channel Bidirectional V-Band Beamformer in 130 nm SiGe:C BiCMOS Technology"
in IEEE MTT-S Int. Microw. Symp. Dig.,
Honolulu, HI,
Jun.
2017,
pp. 1-4.
205.
R. K. Yadav,
F. I. Jamal,
M. Eissa,
J. Wessel and
D. Kissinger,
"A 60 GHz Wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for Dielectric Spectroscopy"
in Proc. IEEE Int. New Circuits Syst. Conf.,
Strasbourg, France,
Jun.
2017,
pp. 285-288.
204.
A. Ergintav,
F. Herzel,
J. Borngräber,
H. J. Ng and
D. Kissinger,
"Low-Power and Low-Noise Programmable Frequency Dividers in a 130 nm SiGe BiCMOS Technology"
in Proc. IEEE Int. New Circuits Syst. Conf.,
Strasbourg, France,
Jun.
2017,
pp. 105-108.