Publikationen

421.

D. Dimlioglu and D. Kissinger, "Introduction to the new “featured MTT-S chapters” series", IEEE Microw. Mag., vol. 26, no. 6, pp. 170-173, Jun. 2025.

420.

R. E. Shabgahi, A. Minkow, M. Wild, D. Kissinger and A. Pasquarelli, "Novel amperometric sensor based on glassy graphene for flow injection analysis", Sensors, vol. 25, no. 8, pp. 2454, Apr. 2025.

419.

A. Hagelauer, J. Akhtar and D. Kissinger, "2024 IEEE MTT-S outstanding chapter awards", IEEE Microw. Mag., vol. 26, no. 3, pp. 107-107, Mä. 2025.

418.

K. Feng, Q. H. Le, T. Kämpfe and D. Kissinger, "A 120-GHz sub-6 dB NF and 19 dB gain low noise amplifier in 22-nm FDSOI" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 467-470.

417.

L. Spießhofer, M. Sander, C. Heine and D. Kissinger, "A broadband high-gain 25–48-GHz vector modulator in a 130-nm BiCMOS technology" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 112-115.

416.

T. Herbel and D. Kissinger, "A compact broadband differential 20–120 GHz amplifier in a 130-nm SiGe:C BiCMOS technology" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 650-652.

415.

R. Huber, L. Zimmermann and D. Kissinger, "A high-speed linear modulator driver for 200-GBd PAM-4 with low group delay variation in 130-nm SiGe BiCMOS" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 132-135.

414.

M. K. Ali, T. Herbel, G. Panic and D. Kissinger, "Large fractional bandwidth D-band power amplifier for 6G communications in 130-nm SiGe BiCMOS technology" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 615-618.

413.

R. E. Shabgahi, A. Pasquarelli, M. Wild and D. Kissinger, "Flow injection amperometric detection of adrenaline using microfluidic cells with thin film boron-doped diamond electrodes: Influence of doping time on performance", Diamond and Rel. Mat., vol. 153, pp. 112092, Feb. 2025.

412.

A. Gadallah, A. Malignaggi, B. Sutbas, H. Rücker, D. Kissinger and M. Eissa, "A high-gain 240–325-GHz power amplifier for IEEE 802.15.3d applications in an advanced BiCMOS technology" in IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. Dig., San Juan, PR, Jan. 2025, pp. 19-22.

411.

A. Mushtaq, T. Mausolf, W. Miesch, N. Uddin, W. Winkler and D. Kissinger, "TX to RX compact leakage cancellation impedance tuner for 60 GHz monostatic doppler radar", IEEE J. Microw., vol. 5, no. 1, pp. 84-95, Jan. 2025.

410.

T. Herbel, M. Tarar, F. Vater and D. Kissinger, "A 130-GHz bandwidth 61-dBOhm variable-gain differential linear TIA in a 130-nm SiGe:C BiCMOS technology" in Proc. IEEE BiCMOS Compound Semicond. Integr. Circuits Technol. Symp., Fort Lauderdale, FL, Okt. 2024, pp. 130-133.

409.

A. Ergintav, F. Herzel, G. Fischer, D. Kissinger and C. Carta, "A 30 GHz PLL with automated frequency control option for robust operation in harsh environments" in Proc. Eur. Microw. Integr. Circuits Conf., Paris, France, Sep. 2024, pp. 34-37.

408.

E. C. Durmaz, C. Heine, Z. Cao, D. Kissinger and M. Wietstruck, "Advancements in the Cu pillar based PCB microfluidic system integration with SiGe BiCMOS technology" in Proc. Smart Systems Integration, Hamburg, Germany, Apr. 2024, pp. 1-4.

407.

C. Heine, E. C. Durmaz, M. Wietstruck and D. Kissinger, "A microfluidic sensor platform for sub-THz dielectric spectroscopy in a SiGe BiCMOS process environment: Technology, circuits, and systems" in Proc. IEEE MTT-S Int. Microw. Biomed. Conf., Leuven, Belgium, Sep. 2023, pp. 1.

406.

Y. Liang, Q. Chen, Y. Wang, D. Kissinger and H. J. Ng, "Spur cancelling technique by folded XOR-gate phase detector and its application to a millimeter-wave SiGe BiCMOS PLL", IEEE Trans. Microw. Theory Techn., vol. 71, no. 8, pp. 3572-3584, Aug. 2023.

405.

A. Karakuzulu, W. A. Ahmad, D. Kissinger and A. Malignaggi, "A four-channel bidirectional D-band phased-array transceiver for 200 Gb/s 6G wireless communications in a 130-nm BiCMOS technology", IEEE J. Solid-State Circuits, vol. 58, no. 5, pp. 1310-1322, Mai 2023.

404.

E. Can Durmaz, C. Heine, Z. Cao, J. Lehmann, D. Kissinger and M. Wietstruck, "SiGe BiCMOS technology with embedded microchannels based on Cu pillar PCB integration enabling sub-THz microfluidic sensor applications" in Proc. IEEE Int. 3D System Integration Conf., Cork, Ireland, Mai 2023, pp. 01-04.

403.

R. Hasan, M. H. Eissa, W. A. Ahmad, H. J. Ng and D. Kissinger, "Wideband and efficient 256-GHz sub-harmonic based FMCW radar transceiver in 130-nm SiGe BiCMOS technology", IEEE Trans. Microw. Theory Techn., vol. 71, no. 1, pp. 59-70, Jan. 2023.

402.

D. Kissinger, "Integrated circuits in SiGe BiCMOS for millimeter-wave and terahertz bioanalyzers (invited paper)" in Proc. IEEE MTT-S Int. Microw. Workshop Series Adv. Mat. Processes RF Terahertz Appl., Guangzhou, China, Dez. 2022, pp. 1-3.

401.

D. Kissinger, M. Kaynak and A. Mai, "Integrated millimeter-wave and terahertz analyzers for biomedical applications (invited paper)", IEEE Trans. Microw. Theory Techn., vol. 70, no. 11, pp. 5141-5158, Nov. 2022.

400.

D. Kissinger, "The MTT-S meetings and symposia committee – supporting your conference", IEEE Microw. Mag., vol. 23, no. 11, pp. 95-97, Nov. 2022.

399.

C. Heine, E. C. Durmaz, D. Wang, Z. Cao, M. Wietstruck, B. Tillack and D. Kissinger, "Towards a fully integrated sub-THz microfluidic sensor platform for dielectric spectroscopy", Frequenz, vol. 76, no. 11-12, pp. 685-697, Nov. 2022.

398.

M. K. Ali, G. Panic and D. Kissinger, "A broadband 110–170 GHz frequency quadrupler with 29 dBc harmonic rejection in a 130-nm SiGe BiCMOS technology" in Proc. Eur. Microw. Integr. Circuits Conf., Milan, Italy, Sep. 2022, pp. 44-47.

397.

A. Ergintav, F. Herzel, F. Korndörfer, T. Mausolf, D. Kissinger and G. Fischer, "A dual-modulus frequency divider up to 128 GHz in SiGe BiCMOS technology" in Proc. Eur. Microw. Integr. Circuits Conf., Milan, Italy, Sep. 2022, pp. 48-51.