Publikationen

430.

A. Tiefenbach, T. Herbel, M. K. Ali, K. Aufinger and D. Kissinger, "A 100–175-GHz single-chip frequency extension module for VNAs with large dynamic range in a 90-nm SiGe BiCMOS technology" in Proc. IEEE RF Syst. Appl. Symp., Boston, MA, Jun. 2026, pp. 349–352.

429.

A. Tiefenbach, K. Aufinger and D. Kissinger, "A compact switchless bidirectional variable gain amplifier for IF distribution in 6G phased arrays in a 130-nm BiCMOS technology" in Proc. IEEE RF Technol. Techn. Symp., Boston, MA, Jun. 2026, pp. 236–239.

428.

S. Lischke, B. Heinemann, D. Steckler, A. Peczek, H. Rücker, C. Mai, A. Kroh, S. Marschmeyer, Y. Yamamoto, A. Krüger, F. Korndörfer, T. Lenke, P. Kulse, O. Fursenko, D. Wolansky, M. Fraschke, K. D. S. Redd, F. Teply, S. Simon, T. Herbel, R. Huber, D. Kissinger and L. Zimmermann, "Monolithic photonic BiCMOS technology with 400-GHz SiGe HBTs and germanium-fin photodiodes" in Proc. IEEE/JSAP Symp. VLSI Technol. Circuits, Honolulu, HI, Jun. 2026, pp. 1-3.

427.

A. Tiefenbach, L. Zimmermann and D. Kissinger, "A bidirectional shunt-switch D-band mixer with a double-balanced combining-filter in a 130-nm BiCMOS technology" in Proc. German Microw. Conf., Karlsruhe, Germany, Mä. 2026, pp. 361-364.

426.

T. Herbel, C. Heine, M. Wietstruck and D. Kissinger, "A compact differential DC–206 GHz variable-gain amplifier in a 130-nm SiGe BiCMOS technology" in Proc. German Microw. Conf., Karlsruhe, Germany, Mä. 2026, pp. 248–250.

425.

R. Hasan, D. Cvetkovski, F. A. Dürrwald, S. Dilek, U. Maaß, A. Bhutani, M. H. Eissa, B. Sutbas, D. Kissinger and C. Carta, "On-chip slotted patch antenna at 226–244 GHz in SiGe Cu-backend technology" in Proc. Asia-Pacific Microw. Conf., Jeju, Korea, Dez. 2025, pp. 1-3.

424.

T. Herbel, A. Peczek, F. Vater and D. Kissinger, "A 190-GHz bandwidth 61-dBΩ low-noise differential transimpedance amplifier in a 130-nm SiGe technology with ft/fmax of 470/650 GHz" in Proc. IEEE BiCMOS Compound Semicond. Integr. Circuits Technol. Symp., Scottsdale, AZ, Okt. 2025, pp. 1-4.

423.

T. Herbel, L. Zimmermann and D. Kissinger, "A full D-band vector modulator phase shifter in a 130-nm SiGe BiCMOS technology" in Proc. IEEE BiCMOS Compound Semicond. Integr. Circuits Technol. Symp., Scottsdale, AZ, Okt. 2025, pp. 1-4.

422.

D. Dimlioglu and D. Kissinger, "Introduction to the new “featured MTT-S chapters” series", IEEE Microw. Mag., vol. 26, no. 6, pp. 170-173, Jun. 2025.

421.

R. E. Shabgahi, A. Minkow, M. Wild, D. Kissinger and A. Pasquarelli, "Novel amperometric sensor based on glassy graphene for flow injection analysis", Sensors, vol. 25, no. 8, pp. 2454, Apr. 2025.

420.

A. Hagelauer, J. Akhtar and D. Kissinger, "2024 IEEE MTT-S outstanding chapter awards", IEEE Microw. Mag., vol. 26, no. 3, pp. 107-107, Mä. 2025.

419.

K. Feng, Q. H. Le, T. Kämpfe and D. Kissinger, "A 120-GHz sub-6 dB NF and 19 dB gain low noise amplifier in 22-nm FDSOI" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 467-470.

418.

L. Spießhofer, M. Sander, C. Heine and D. Kissinger, "A broadband high-gain 25–48-GHz vector modulator in a 130-nm BiCMOS technology" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 112-115.

417.

T. Herbel and D. Kissinger, "A compact broadband differential 20–120 GHz amplifier in a 130-nm SiGe:C BiCMOS technology" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 650-652.

416.

R. Huber, L. Zimmermann and D. Kissinger, "A high-speed linear modulator driver for 200-GBd PAM-4 with low group delay variation in 130-nm SiGe BiCMOS" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 132-135.

415.

M. K. Ali, T. Herbel, G. Panic and D. Kissinger, "Large fractional bandwidth D-band power amplifier for 6G communications in 130-nm SiGe BiCMOS technology" in Proc. German Microw. Conf., Dresden, Germany, Mä. 2025, pp. 615-618.

414.

R. E. Shabgahi, A. Pasquarelli, M. Wild and D. Kissinger, "Flow injection amperometric detection of adrenaline using microfluidic cells with thin film boron-doped diamond electrodes: Influence of doping time on performance", Diamond and Rel. Mat., vol. 153, pp. 112092, Feb. 2025.

413.

L. Spießhofer, A. Tiefenbach and D. Kissinger, "A Compact Fully-Differential 227-327-GHz Push-Push Frequency Doubler with an Active Balun in a 130-nm BiCMOS Technology" in 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2025, pp. 1-4.

412.

A. Gadallah, A. Malignaggi, B. Sutbas, H. Rücker, D. Kissinger and M. Eissa, "A high-gain 240–325-GHz power amplifier for IEEE 802.15.3d applications in an advanced BiCMOS technology" in IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. Dig., San Juan, PR, Jan. 2025, pp. 19-22.

411.

A. Mushtaq, T. Mausolf, W. Miesch, N. Uddin, W. Winkler and D. Kissinger, "TX to RX compact leakage cancellation impedance tuner for 60 GHz monostatic doppler radar", IEEE J. Microw., vol. 5, no. 1, pp. 84-95, Jan. 2025.

410.

T. Herbel, M. Tarar, F. Vater and D. Kissinger, "A 130-GHz bandwidth 61-dBOhm variable-gain differential linear TIA in a 130-nm SiGe:C BiCMOS technology" in Proc. IEEE BiCMOS Compound Semicond. Integr. Circuits Technol. Symp., Fort Lauderdale, FL, Okt. 2024, pp. 130-133.

409.

A. Ergintav, F. Herzel, G. Fischer, D. Kissinger and C. Carta, "A 30 GHz PLL with automated frequency control option for robust operation in harsh environments" in Proc. Eur. Microw. Integr. Circuits Conf., Paris, France, Sep. 2024, pp. 34-37.

408.

E. C. Durmaz, C. Heine, Z. Cao, D. Kissinger and M. Wietstruck, "Advancements in the Cu pillar based PCB microfluidic system integration with SiGe BiCMOS technology" in Proc. Smart Systems Integration, Hamburg, Germany, Apr. 2024, pp. 1-4.

407.

C. Heine, E. C. Durmaz, M. Wietstruck and D. Kissinger, "A microfluidic sensor platform for sub-THz dielectric spectroscopy in a SiGe BiCMOS process environment: Technology, circuits, and systems" in Proc. IEEE MTT-S Int. Microw. Biomed. Conf., Leuven, Belgium, Sep. 2023, pp. 1.

406.

Y. Liang, Q. Chen, Y. Wang, D. Kissinger and H. J. Ng, "Spur cancelling technique by folded XOR-gate phase detector and its application to a millimeter-wave SiGe BiCMOS PLL", IEEE Trans. Microw. Theory Techn., vol. 71, no. 8, pp. 3572-3584, Aug. 2023.