Publikationen

354.

A. Ali, J. Yun, M. Kucharski, H. J. Ng, D. Kissinger and P. Colantonio, "220–360-GHz broadband frequency multiplier chains (x8) in 130-nm BiCMOS technology", IEEE Trans. Microw. Theory Techn., vol. 68, no. 7, pp. 2701-2715, Jul. 2020.

353.

Y. Liang, C. C. Boon, Y. Dong, Q. Chen, Z. Liu, C. Li, T. Mausolf, D. Kissinger, Y. Wang and H. J. Ng, "A 311.6 GHz phase-locked loop in 0.13 µm SiGe BiCMOS process with −90 dBc/Hz in-band phase noise" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 1133-1136.

352.

A. Karakuzulu, M. H. Eissa, D. Kissinger and A. Malignaggi, "Broadband 110 - 170 GHz true time delay circuit in a 130-nm SiGe BiCMOS technology" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 775-778.

351.

D. Wang, M. H. Eissa, K. Schmalz, T. Kämpfe and D. Kissinger, "240-GHz reflectometer with integrated transducer for dielectric spectroscopy in a 130-nm SiGe BiCMOS technology" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 1129-1132.

350.

M. H. Eissa, N. Maletic, E. Grass, R. Kraemer, D. Kissinger and A. Malignaggi, "100 Gbps 0.8-m wireless link based on fully integrated 240 GHz IQ transmitter and receiver" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 627-630.

349.

W. A. Ahmad, M. Kucharski, A. Ergintav, D. Kissinger and H. J. Ng, "Modular scalable 80- and 160-GHz radar sensor platform for multiple radar techniques and applications" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 1275-1278.

348.

M. Voelkel, S. Pechmann, H. J. Ng, D. Kissinger, R. Weigel and A. Hagelauer, "A integrated bistatic 4xTX/4xRX six-port MIMO-transceiver at 60 GHz in a 130-nm SiGe BiCMOS technology for radar applications" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 1219-1222.

347.

A. Ali, J. Yun, F. Giannini, H. J. Ng, D. Kissinger and P. Colantonio, "168-195 GHz power amplifier with output power larger than 18 dBm in BiCMOS technology", IEEE Access, vol. 8, no. 1, pp. 79299-79309, Mai 2020.

346.

M. Nickel, A. Jiménez-Sáez, P. Agrawal, A. Gadallah, A. Malignaggi, C. Schuster, R. Reese, H. Tesmer, E. Polat, D. Wang, P. Schumacher, R. Jakoby, D. Kissinger and H. Maune, "Ridge gap waveguide based liquid crystal phase shifter", IEEE Access, vol. 8, no. 1, pp. 77833-77842, Mai 2020.

345.

A. Ali, J. Yun, H. J. Ng, D. Kissinger, F. Giannini and P. Colantonio, "90 GHz bandwidth single-ended PA for D-Band applications in BiCMOS technology" in Proc. Australian Microw. Symp., Sydney, Australia, Feb. 2020, pp. 1-2.

344.

M. H. Eissa, N. Maletic, L. Lopacinski, A. Malignaggi, G. Panic, R. Kraemer, G. Fischer and D. Kissinger, "Frequency interleaving IF transmitter and receiver for 240-GHz communication in SiGe:C BiCMOS", IEEE Trans. Microw. Theory Tech., vol. 68, no. 1, pp. 239-251, Jan. 2020.

343.

W. A. Ahmad, D. Kissinger and H. J. Ng, "Millimeter-wave single-layer full-band WR12 vertical waveguide transition" in Proc. IEEE Radio Wireless Symp., San Antonio, TX, San Antonio, TX, Jan. 2020, pp. 298-301.

342.

A. Gadallah, M. H. Eissa, D. Kissinger and A. Malignaggi, "A V-band bidirectional amplifier-module for hybrid phased-array systems in BiCMOS technology" in Proc. IEEE Radio Wireless Symp., San Antonio, TX, Jan. 2020, pp. 330-333.

341.

M. Voelkel, S. Pechmann, M. Eissa, D. Kissinger, R. Weigel and A. Hagelauer, "A cascadable integrated bistatic six-port transceiver at 60 GHz in a 130-nm BiCMOS technology for SIMO-radar applications", Proc. Asia-Pacific Microw. Conf., pp. 714-716, Dez. 2019.

340.

M. H. Eissa, A. Malignaggi and D. Kissinger, "A 13.5-dBm 200–255-GHz 4-way power amplifier and frequency source in 130-nm BiCMOS", IEEE Solid-State Circuits Lett., vol. 2, no. 11, pp. 268-271, Dez. 2019.

339.

H. J. Ng, W. A. Ahmad and D. Kissinger, "Highly-integrated radar transceiver with 2 TX and 4 RX channels for range, azimuthal and polar angle measurements", Singapore, Dez. 2019, pp. 433-435.

338.

D. Wang, M. H. Eissa, K. Schmalz, J. Yun, A. Malignaggi, J. Borngräber, M. Kucharski, T. Kämpfe, K. Seidel, H. J. Ng and D. Kissinger, "240-GHz four-channel power-tuning heterodyne sensing readout system with reflection and transmission measurements in a 130-nm SiGe BiCMOS technology", IEEE Trans. Microw. Theory Tech., vol. 67, no. 12, pp. 5296-5306, Dez. 2019.

337.

H. Bello, L. Pantoli, H. J. Ng, D. Kissinger and G. Leuzzi, "A Low Phase-Noise High Output Power 176-GHz Voltage-Controlled Oscillator in a 130-nm BiCMOS Technology", IET Microw. Antennas Propag., vol. 13, no. 14, pp. 2490-2490, Nov. 2019.

336.

W. A. Ahmad, M. Kucharski, A. Di Serio, H. J. Ng, C. Waldschmidt and D. Kissinger, "Planar Highly Efficient High-Gain 165 GHz On-Chip Antennas for Integrated Radar Sensors", IEEE Antennas Wireless Propag. Lett., vol. 18, no. 11, pp. 2429-2433, Nov. 2019.

335.

H. J. Ng, R. Hasan and D. Kissinger, "A Scalable Four-Channel Frequency-Division Multiplexing MIMO Radar Utilizing Single-Sideband Delta–Sigma Modulation", IEEE Trans. Microw. Theory Tech., vol. 67, no. 11, pp. 4578-4590, Nov. 2019.

334.

M. Voelkel, M. Dietz, A. Hagelauer, M. H. Eissa, D. Kissinger and R. Weigel, "A Digital Adjustable Fully Integrated Bistatic Interferometric Radar Transceiver at 60 GHz in a 130-nm BiCMOS Technology" in Proc. Eur. Microw. Integr. Circuits Conf., Paris, France, Okt. 2019, pp. 220-223.

333.

V. Lammert, C. Heine, J. Wessel, F. I. Jamal, D. Kissinger, A. Geiselbrechtinger and V. Issakov, "A K-Band Complex Permittivity Sensor for Biomedical Applications in 130-nm SiGe BiCMOS", IEEE Trans. Circuits Syst. II, vol. 66, no. 10, pp. 1628-1632, Okt. 2019.

332.

W. Ahmad, T. Inoue, D. Kissinger and H. J. Ng, "Planar Millimeter-Wave Waveguide Transition for Material Characterization at 79 GHz" in Proc. Eur. Microw. Conf., Paris, France, Okt. 2019, pp. 356-359.

331.

A. Ali, J. Yun, H. J. Ng, D. Kissinger, F. Giannini and P. Colantonio, "Sub-THz On-Chip Dielectric Resonator Antenna with Wideband Performance" in Proc. Eur. Microw. Conf., Paris, France, Okt. 2019, pp. 912-915.

330.

A. Ali, P. Colantonio, F. Giannini, D. Kissinger, H. J. Ng and J. Yun, "An 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology" in Proc. Eur. Microw. Integr. Circuits Conf., Paris, France, Okt. 2019, pp. 164-167.