Publikationen

2020

357.
W. Lin, R. W. Ziolkowski, Y. Yang, W. A. Ahmad, L. Yuan, H. J. Ng and D. Kissinger, "320 GHz on-chip circularly-polarized antenna array realized with 0.13 µm BiCMOS technology" in Proc. IEEE Int. Symp. Antennas Propag., Montreal, Canada, Jul. 2020.
356.
L. Pantoli, H. Bello, G. Leuzzi, H. J. Ng and D. Kissinger, "SiGe Sub-THz VCOs design approach for imaging applications" in Int. Workshop on Integr. Nonlinear Microw. and Millimetre-Wave Circuits, Cardiff, United Kingdom, Jul. 2020, pp. 1-3.
355.
A. Ali, J. Yun, H. J. Ng, D. Kissinger, F. Giannini and P. Colantonio, "D-Band balanced PA with wideband performance in BiCMOS technology" in Int. Workshop on Integr. Nonlinear Microw. and Millimetre-Wave Circuits, Cardiff, United Kingdom, Jul. 2020, pp. 1-3.
354.
W. Ahmad, H. J. Ng, C. Waldschmidt and D. Kissinger, "Micromachined 160 GHz endfire antenna in 130-nm BiCMOS technology for radar application" in Proc. IEEE Int. Symp. Antennas Propag., Montreal, Canada, Jul. 2020.
353.
W. A. Ahmad, M. Kucharski, A. Ergintav, D. Kissinger and H. J. Ng, "Modular scalable 80- and 160-GHz radar sensor platform for multiple radar techniques and applications" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 1275-1278.
352.
M. H. Eissa, N. Maletic, E. Grass, R. Kraemer, D. Kissinger and A. Malignaggi, "100 Gbps 0.8-m wireless link based on fully integrated 240 GHz IQ transmitter and receiver" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 627-630.
351.
Y. Liang, C. C. Boon, Q. Chen, Z. Liu, C. Li, T. Mausolf, D. Kissinger and H. J. Ng, "A 311.6 GHz phase-locked loop in 0.13 µm SiGe BiCMOS process with −90 dBc/Hz in-band phase noise" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 1133-1136.
350.
M. Voelkel, S. Pechmann, H. J. Ng, D. Kissinger, R. Weigel and A. Hagelauer, "A integrated bistatic 4xTX/4xRX six-port MIMO-transceiver at 60 GHz in a 130-nm SiGe BiCMOS technology for radar applications" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 1219-1222.
349.
M. H. Eissa, K. Schmalz, T. Kämpfe and D. Kissinger, "240-GHz reflectometer with integrated transducer for dielectric spectroscopy in a 130-nm SiGe BiCMOS technology" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 1129-1132.
348.
A. Karakuzulu, M. H. Eissa, D. Kissinger and A. Malignaggi, "Broadband 110 - 170 GHz true time delay circuit in a 130-nm SiGe BiCMOS technology" in IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, CA, Jun. 2020, pp. 775-778.
347.
M. Nickel, A. Jiménez-Sáez, P. Agrawal, A. Gadallah, A. Malignaggi, C. Schuster, R. Reese, H. Tesmer, E. Polat, P. Schumacher, R. Jakoby, D. Kissinger and H. Maune, "Ridge gap waveguide based liquid crystal phase shifter", IEEE Access, vol. 8, no. 1, pp. 77833-77842, Mai 2020.
346.
A. Ali, J. Yun, F. Giannini, H. J. Ng, D. Kissinger and P. Colantonio, "168-195 GHz power amplifier with output power larger than 18 dBm in BiCMOS technology", IEEE Access, vol. 8, no. 1, pp. 79299-79309, Mai 2020.
345.
A. Ali, J. Yun, H. J. Ng, D. Kissinger, F. Giannini and P. Colantonio, "90 GHz bandwidth single-ended PA for D-Band applications in BiCMOS technology" in Proc. Australian Microw. Symp., Sydney, Australia, Feb. 2020, pp. 1-2.
344.
M. H. Eissa, N. Maletic, L. Lopacinski, A. Malignaggi, G. Panic, R. Kraemer, G. Fischer and D. Kissinger, "Frequency interleaving IF transmitter and receiver for 240-GHz communication in SiGe:C BiCMOS", IEEE Trans. Microw. Theory Tech., vol. 68, no. 1, pp. 239-251, Jan. 2020.
343.
A. Gadallah, M. H. Eissa, D. Kissinger and A. Malignaggi, "A V-band bidirectional amplifier-module for hybrid phased-array systems in BiCMOS technology" in Proc. IEEE Radio Wireless Symp., San Antonio, TX, Jan. 2020, pp. 330-333.
342.
W. A. Ahmad, D. Kissinger and H. J. Ng, "Millimeter-wave single-layer full-band WR12 vertical waveguide transition" in Proc. IEEE Radio Wireless Symp., San Antonio, TX, San Antonio, TX, Jan. 2020, pp. 298-301.

2019

341.
H. J. Ng, W. A. Ahmad and D. Kissinger, "Highly-integrated radar transceiver with 2 TX and 4 RX channels for range, azimuthal and polar angle measurements", Singapore, Dez. 2019, pp. 433-435.
340.
D. Wang, M. H. Eissa, K. Schmalz, J. Yun, A. Malignaggi, J. Borngräber, M. Kucharski, T. Kämpfe, K. Seidel, H. J. Ng and D. Kissinger, "240-GHz four-channel power-tuning heterodyne sensing readout system with reflection and transmission measurements in a 130-nm SiGe BiCMOS technology", IEEE Trans. Microw. Theory Tech., vol. 67, no. 12, pp. 5296-5306, Dez. 2019.
339.
M. H. Eissa, A. Malignaggi and D. Kissinger, "A 13.5-dBm 200–255-GHz 4-way power amplifier and frequency source in 130-nm BiCMOS", IEEE Solid-State Circuits Lett., vol. 2, no. 11, pp. 268-271, Dez. 2019.
338.
M. Voelkel, S. Pechmann, M. Eissa, D. Kissinger, R. Weigel and A. Hagelauer, "A cascadable integrated bistatic six-port transceiver at 60 GHz in a 130-nm BiCMOS technology for SIMO-radar applications", Proc. Asia-Pacific Microw. Conf., pp. 714-716, Dez. 2019.
337.
H. Bello, L. Pantoli, H. J. Ng, D. Kissinger and G. Leuzzi, "A Low Phase-Noise High Output Power 176-GHz Voltage-Controlled Oscillator in a 130-nm BiCMOS Technology", IET Microw. Antennas Propag., vol. 13, no. 14, pp. 2490-2490, Nov. 2019.
336.
H. J. Ng, R. Hasan and D. Kissinger, "A Scalable Four-Channel Frequency-Division Multiplexing MIMO Radar Utilizing Single-Sideband Delta–Sigma Modulation", IEEE Trans. Microw. Theory Tech., vol. 67, no. 11, pp. 4578-4590, Nov. 2019.
335.
W. A. Ahmad, M. Kucharski, A. Di Serio, H. J. Ng, C. Waldschmidt and D. Kissinger, "Planar Highly Efficient High-Gain 165 GHz On-Chip Antennas for Integrated Radar Sensors", IEEE Antennas Wireless Propag. Lett., vol. 18, no. 11, pp. 2429-2433, Nov. 2019.
334.
W. Ahmad, T. Inoue, D. Kissinger and H. J. Ng, "Planar Millimeter-Wave Waveguide Transition for Material Characterization at 79 GHz" in Proc. Eur. Microw. Conf., Paris, France, Okt. 2019, pp. 356-359.
333.
A. Ali, P. Colantonio, F. Giannini, D. Kissinger, H. J. Ng and J. Yun, "An 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology" in Proc. Eur. Microw. Integr. Circuits Conf., Paris, France, Okt. 2019, pp. 164-167.