Publikationen
2020
354.
A. Ali,
J. Yun,
M. Kucharski,
H. J. Ng,
D. Kissinger and
P. Colantonio,
"220–360-GHz broadband frequency multiplier chains (x8) in 130-nm BiCMOS technology",
IEEE Trans. Microw. Theory Techn.,
vol. 68,
no. 7,
pp. 2701-2715,
Jul.
2020.
353.
Y. Liang,
C. C. Boon,
Y. Dong,
Q. Chen,
Z. Liu,
C. Li,
T. Mausolf,
D. Kissinger,
Y. Wang and
H. J. Ng,
"A 311.6 GHz phase-locked loop in 0.13 µm SiGe BiCMOS process with −90 dBc/Hz in-band phase noise"
in IEEE MTT-S Int. Microw. Symp. Dig.,
Los Angeles, CA,
Jun.
2020,
pp. 1133-1136.
352.
A. Karakuzulu,
M. H. Eissa,
D. Kissinger and
A. Malignaggi,
"Broadband 110 - 170 GHz true time delay circuit in a 130-nm SiGe BiCMOS technology"
in IEEE MTT-S Int. Microw. Symp. Dig.,
Los Angeles, CA,
Jun.
2020,
pp. 775-778.
351.
D. Wang,
M. H. Eissa,
K. Schmalz,
T. Kämpfe and
D. Kissinger,
"240-GHz reflectometer with integrated transducer for dielectric spectroscopy in a 130-nm SiGe BiCMOS technology"
in IEEE MTT-S Int. Microw. Symp. Dig.,
Los Angeles, CA,
Jun.
2020,
pp. 1129-1132.
350.
M. H. Eissa,
N. Maletic,
E. Grass,
R. Kraemer,
D. Kissinger and
A. Malignaggi,
"100 Gbps 0.8-m wireless link based on fully integrated 240 GHz IQ transmitter and receiver"
in IEEE MTT-S Int. Microw. Symp. Dig.,
Los Angeles, CA,
Jun.
2020,
pp. 627-630.
349.
W. A. Ahmad,
M. Kucharski,
A. Ergintav,
D. Kissinger and
H. J. Ng,
"Modular scalable 80- and 160-GHz radar sensor platform for multiple radar techniques and applications"
in IEEE MTT-S Int. Microw. Symp. Dig.,
Los Angeles, CA,
Jun.
2020,
pp. 1275-1278.
348.
M. Voelkel,
S. Pechmann,
H. J. Ng,
D. Kissinger,
R. Weigel and
A. Hagelauer,
"A integrated bistatic 4xTX/4xRX six-port MIMO-transceiver at 60 GHz in a 130-nm SiGe BiCMOS technology for radar applications"
in IEEE MTT-S Int. Microw. Symp. Dig.,
Los Angeles, CA,
Jun.
2020,
pp. 1219-1222.
347.
A. Ali,
J. Yun,
F. Giannini,
H. J. Ng,
D. Kissinger and
P. Colantonio,
"168-195 GHz power amplifier with output power larger than 18 dBm in BiCMOS technology",
IEEE Access,
vol. 8,
no. 1,
pp. 79299-79309,
Mai
2020.
346.
M. Nickel,
A. Jiménez-Sáez,
P. Agrawal,
A. Gadallah,
A. Malignaggi,
C. Schuster,
R. Reese,
H. Tesmer,
E. Polat,
D. Wang,
P. Schumacher,
R. Jakoby,
D. Kissinger and
H. Maune,
"Ridge gap waveguide based liquid crystal phase shifter",
IEEE Access,
vol. 8,
no. 1,
pp. 77833-77842,
Mai
2020.
345.
A. Ali,
J. Yun,
H. J. Ng,
D. Kissinger,
F. Giannini and
P. Colantonio,
"90 GHz bandwidth single-ended PA for D-Band applications in BiCMOS technology"
in Proc. Australian Microw. Symp.,
Sydney, Australia,
Feb.
2020,
pp. 1-2.
344.
M. H. Eissa,
N. Maletic,
L. Lopacinski,
A. Malignaggi,
G. Panic,
R. Kraemer,
G. Fischer and
D. Kissinger,
"Frequency interleaving IF transmitter and receiver for 240-GHz communication in SiGe:C BiCMOS",
IEEE Trans. Microw. Theory Tech.,
vol. 68,
no. 1,
pp. 239-251,
Jan.
2020.
343.
W. A. Ahmad,
D. Kissinger and
H. J. Ng,
"Millimeter-wave single-layer full-band WR12 vertical waveguide transition"
in Proc. IEEE Radio Wireless Symp.,
San Antonio, TX,
San Antonio, TX,
Jan.
2020,
pp. 298-301.
342.
A. Gadallah,
M. H. Eissa,
D. Kissinger and
A. Malignaggi,
"A V-band bidirectional amplifier-module for hybrid phased-array systems in BiCMOS technology"
in Proc. IEEE Radio Wireless Symp.,
San Antonio, TX,
Jan.
2020,
pp. 330-333.
2019
341.
M. Voelkel,
S. Pechmann,
M. Eissa,
D. Kissinger,
R. Weigel and
A. Hagelauer,
"A cascadable integrated bistatic six-port transceiver at 60 GHz in a 130-nm BiCMOS technology for SIMO-radar applications",
Proc. Asia-Pacific Microw. Conf.,
pp. 714-716,
Dez.
2019.
340.
M. H. Eissa,
A. Malignaggi and
D. Kissinger,
"A 13.5-dBm 200–255-GHz 4-way power amplifier and frequency source in 130-nm BiCMOS",
IEEE Solid-State Circuits Lett.,
vol. 2,
no. 11,
pp. 268-271,
Dez.
2019.
339.
H. J. Ng,
W. A. Ahmad and
D. Kissinger,
"Highly-integrated radar transceiver with 2 TX and 4 RX channels for range, azimuthal and polar angle measurements",
Singapore,
Dez.
2019,
pp. 433-435.
338.
D. Wang,
M. H. Eissa,
K. Schmalz,
J. Yun,
A. Malignaggi,
J. Borngräber,
M. Kucharski,
T. Kämpfe,
K. Seidel,
H. J. Ng and
D. Kissinger,
"240-GHz four-channel power-tuning heterodyne sensing readout system with reflection and transmission measurements in a 130-nm SiGe BiCMOS technology",
IEEE Trans. Microw. Theory Tech.,
vol. 67,
no. 12,
pp. 5296-5306,
Dez.
2019.
337.
H. Bello,
L. Pantoli,
H. J. Ng,
D. Kissinger and
G. Leuzzi,
"A Low Phase-Noise High Output Power 176-GHz Voltage-Controlled Oscillator in a 130-nm BiCMOS Technology",
IET Microw. Antennas Propag.,
vol. 13,
no. 14,
pp. 2490-2490,
Nov.
2019.
336.
W. A. Ahmad,
M. Kucharski,
A. Di Serio,
H. J. Ng,
C. Waldschmidt and
D. Kissinger,
"Planar Highly Efficient High-Gain 165 GHz On-Chip Antennas for Integrated Radar Sensors",
IEEE Antennas Wireless Propag. Lett.,
vol. 18,
no. 11,
pp. 2429-2433,
Nov.
2019.
335.
H. J. Ng,
R. Hasan and
D. Kissinger,
"A Scalable Four-Channel Frequency-Division Multiplexing MIMO Radar Utilizing Single-Sideband Delta–Sigma Modulation",
IEEE Trans. Microw. Theory Tech.,
vol. 67,
no. 11,
pp. 4578-4590,
Nov.
2019.
334.
M. Voelkel,
M. Dietz,
A. Hagelauer,
M. H. Eissa,
D. Kissinger and
R. Weigel,
"A Digital Adjustable Fully Integrated Bistatic Interferometric Radar Transceiver at 60 GHz in a 130-nm BiCMOS Technology"
in Proc. Eur. Microw. Integr. Circuits Conf.,
Paris, France,
Okt.
2019,
pp. 220-223.
333.
V. Lammert,
C. Heine,
J. Wessel,
F. I. Jamal,
D. Kissinger,
A. Geiselbrechtinger and
V. Issakov,
"A K-Band Complex Permittivity Sensor for Biomedical Applications in 130-nm SiGe BiCMOS",
IEEE Trans. Circuits Syst. II,
vol. 66,
no. 10,
pp. 1628-1632,
Okt.
2019.
332.
W. Ahmad,
T. Inoue,
D. Kissinger and
H. J. Ng,
"Planar Millimeter-Wave Waveguide Transition for Material Characterization at 79 GHz"
in Proc. Eur. Microw. Conf.,
Paris, France,
Okt.
2019,
pp. 356-359.
331.
A. Ali,
J. Yun,
H. J. Ng,
D. Kissinger,
F. Giannini and
P. Colantonio,
"Sub-THz On-Chip Dielectric Resonator Antenna with Wideband Performance"
in Proc. Eur. Microw. Conf.,
Paris, France,
Okt.
2019,
pp. 912-915.
330.
A. Ali,
P. Colantonio,
F. Giannini,
D. Kissinger,
H. J. Ng and
J. Yun,
"An 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology"
in Proc. Eur. Microw. Integr. Circuits Conf.,
Paris, France,
Okt.
2019,
pp. 164-167.