Publikationen

2019

307.
Y. Liang, C. C. Boon and D. Kissinger, "A Low-Power D-type Flip-flop with Active Inductor and Forward Body Biasing Techniques in 40 nm CMOS" in IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. Dig., Orlando, FL, Jan. 2019, pp. 1-4.
306.
A. Karakuzulu, A. Malignaggi and D. Kissinger, "D-Band SPDT Switches Using Reverse and Forward Saturated SiGe HBTs" in IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. Dig., Orlando, FL, Jan. 2019, pp. 1-3.
305.
W. Ahmad, H. J. Ng and D. Kissinger, "Design of Planar Waveguide Transition and Antenna Array utilizing Low-Loss Substrate for 79 GHz Radar Applications" in Proc. IEEE Radio Wireless Symp., Orlando, FL, Jan. 2019, pp. 1-3.
304.
C. Wipf, R. Sorge, S. T. Wipf, A. G, A. Scheit, D. Kissinger and M. Kaynak, "RF-MEMS Based V-Band Impedance Tuner Driven by Integrated High-Voltage LDMOS Switch Matrix and Charge Pump" in IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. Dig., Orlando, FL, Jan. 2019, pp. 1-3.
303.
K. Schmalz, N. Rothbart, M. H. Eissa, J. Borngräber, D. Kissinger and H. -. Hübers, "Transmitters and Receivers in SiGe BiCMOS Technology for Sensitive Gas Spectroscopy at 222-270 GHz", AIP Advances, vol. 9, no. 1, pp. 15213, Jan. 2019.

2018

302.
M. Frank, T. Reissland, F. Lurz, M. Voelkel, F. Lambrecht, S. Kiefl, P. Ghesquiere, H. J. Ng, D. Kissinger, R. Weigel and A. Koelpin, "Antenna and Package Design for 61- and 122-GHz Radar Sensors in Embedded Wafer-Level Ball Grid Array Technology", IEEE Trans. Microw. Theory Tech., vol. 66, no. 12, pp. 5156-5168, Dez. 2018.
301.
H. J. Ng and D. Kissinger, "On-chip Antennas in SiGe BiCMOS Technology: Challenges, State of the Art and Future Directions" in Proc. Asia-Pacific Microw. Conf., Kyoto, Japan, Dez. 2018, pp. 621-623.
300.
K. Schmalz, J. Borngräber and D. Kissinger, "On-chip Scalable Resonator-based Transducers for Terahertz Dielectric Sensing in SiGe BiCMOS Technology" in Proc. Asia-Pacific Microw. Conf., Kyoto, Japan, Dez. 2018, pp. 240-242.
299.
Y. Liang, C. C. Boon, H. Yu and D. Kissinger, "On-chip Terahertz Surface-Wave Transmission Line Based on Folded Strips" in Proc. Asia-Pacific Microw. Conf., Kyoto, Japan, Dez. 2018, pp. 198-200.
298.
A. Hollmann, D. Jirovec, M. Kucharski, D. Kissinger, G. Fischer and L. Schreiber, "30 GHz-voltage controlled oscillator operating at 4 K", Rev. Sci. Instrum., vol. 89, no. 11, pp. 114701, Nov. 2018.
297.
F. Herzel, A. Ergintav, J. Borngräber and D. Kissinger, "A 15-50 GHz Multiplexer Circuit in 130 nm SiGe BiCMOS Technology for Ultra-Wide Frequency Ramps in FMCW Radar" in Proc. Nordic Circuits Syst. Conf., Tallinn, Estonia, Okt. 2018, pp. 1-4.
296.
P. Ostrovskyy, O. Schrape, K. Tittelbach-Helmrich, F. Herzel, G. Fischer, D. Hellmann, P. Börner, A. Loose, P. Hartogh and D. Kissinger, "A Radiation Hardened 16 GS/s Arbitrary Waveform Generator IC for THz-range Chirp-Transform Spectrometer" in Proc. Nordic Circuits Syst. Conf., Tallinn, Estonia, Okt. 2018, pp. 1-4.
295.
L. Stampoulidis, E. Kehayas, M. Karppinen, A. Tanskanen, J. Gustavsson, A. Larsson, L. Gr, C. Larsen, M. Sotom, A. Maho, M. Eaugeron, N. Venet, P. Ostrovskyy, D. Kissinger, R. Safaisini and R. King, "The European ROBIN Project: High-speed, low-power and board-mountable optical transceivers for scalable and energy efficient on-board digital transparent processors" in Proc. Int. Conf. Space Optics, Chania, Greece, Okt. 2018, pp. 1.
294.
M. Ko, M. H. Eissa, J. Borngräber, A. C. Ulusoy and D. Kissinger, "110-135 GHz SiGe BiCMOS Frequency Quadrupler Based on a Single Gilbert Cell" in Proc. Eur. Microw. Integr. Circuits Conf., Madrid, Spain, Sep. 2018, pp. 101-104.
293.
E. Öztürk, D. Genschow, U. Yodprasit, B. Yilmaz, D. Kissinger, W. Debski and W. Winkler, "A 120 GHz SiGe BiCMOS Monostatic Transceiver for Radar Applications" in Proc. Eur. Microw. Integr. Circuits Conf., Madrid, Spain, Sep. 2018, pp. 41-44.
292.
F. I. Jamal, S. Guha, M. H. Eissa, J. Wessel and D. Kissinger, "A Fully Integrated Low-Power 30 GHz Complex Dielectric Sensor in a 0.25-µm BiCMOS Technology", IEEE J. Electromagn. RF Microw. Med. Biol., vol. 2, no. 3, pp. 163-171, Sep. 2018.
291.
M. Hossain, M. H. Eissa, M. Hrobak, D. Stoppel, N. Weimann, A. Malignaggi, A. Mai, D. Kissinger, W. Heinrich and V. Krozer, "A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology" in Proc. Eur. Microw. Integr. Circuits Conf., Madrid, Spain, Sep. 2018, pp. 97-100.
290.
W. A. Ahmad, D. Kissinger and H. J. Ng, "An On-Board Differential Patch Array for 79 GHz Single-Channel Radar Applications" in Proc. Eur. Microw. Conf., Madrid, Spain, Sep. 2018, pp. 1385-1388.
289.
N. Fiebig, G. Fischer, P. Ostrovskyy and D. Kissinger, "Considerations on the Design Methodology for an Integrated Gate Driver" in Proc. Analog, Munich, Germany, Sep. 2018, pp. 131-135.
288.
M. Kucharski, A. Malignaggi, H. J. Ng and D. Kissinger, "D-Band Frequency Quadruplers in BiCMOS Technology", IEEE J. Solid-State Circuits, vol. 53, no. 9, pp. 2465-2478, Sep. 2018.
287.
Y. Liang, C. C. Boon, C. Li, H. Yu and D. Kissinger, "D-band Surface-wave Modulator and Signal Source with 40 dB Extinction Ratio and 3.7 mW Output Power in 65 nm CMOS" in Proc. Eur. Solid-State Circuits Conf., Dresden, Germany, Sep. 2018, pp. 142-145.
286.
F. Herzel, A. Ergintav, U. Jagdhold and D. Kissinger, "Design of a 28-32 GHz Low-Noise PLL with Automatic Frequency Calibration" in Proc. Analog, Munich, Germany, Sep. 2018, pp. 57-61.
285.
N. Rothbart, K. Schmalz, J. Borngräber, D. Kissinger and H. -. Hübers, "Detection of Volatile Organic Compounds in Exhaled Human Breath by Millimeter-Wave/Terahertz Spectroscopy" in Proc. Int. Conf. Infrared Millimeter and Terahertz Waves, Nagoya, Japan, Sep. 2018, pp. 1-2.
284.
F. Herzel and D. Kissinger, "Error analysis of target angle and angular velocity in a PLL-based FMCW radar measurement" in Proc. Eur. Radar Conf., Madrid, Spain, Sep. 2018, pp. 67-70.
283.
B. Wohlfeil, N. Eiselt, P. Rito, A. Dochhan, G. R. Mehrpoor, D. Rafique, D. Petousi, I. Garcia Lopez, D. Kissinger, L. Zimmermann, M. Eiselt, H. Griesser and J. -. Elbers, "First Demonstration of Fully Integrated Segmented Driver and MZM in 0.25-µm SiGe BiCMOS employing 112 Gb/s PAM4 over 60 km SSMF" in Proc. Europ. Conf. Opt. Commun., Rome, Italy, Sep. 2018, pp. 1-3.